<2>.mi-l.onallctoi l/^ioaucti, one, 20 stern ave. springfield, new jersey 07081 u.s.a. designer's'? data sheet switchmode series npn silicon power transistors the bus98 and BUS98A transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. they are particularly suited for line-operated switchmode applications such as: ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits fast turn-off times 60 ns inductive fall time -25c (typ) 120 ns inductive crossover time -25c (typ) operating temperature range -65 to +200c 100c performance specified for: reverse-biased soa with inductive loads switching times with inductive loads saturation voltages leakage currents (125c) telephone: (973) 376-2922 (212)227-6005 bus98 BUS98A 30 amperes npn silicon power transistors 400 and 450 volts (bvceo) 250 watts 850-1000 v(bvces) to-204aa maximum ratings thermal characteristics (1) pulse test: pulse width = 5 ms, duty cycle 10%. rating collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous ? peak(1) ? overload base current ? continuous ? peak(1) total power dissipation ? tc = 25c ? tc = 100c derate above 25c operating and storage junction temperature range symbol vceo(sus) vcev veb 'c 'cm lol ib ?bm pd tj, tstg bus98 BUS98A 400 450 850 1000 7 30 60 120 10 30 250 142 1.42 -65to+200 unit vdc vdc vdc adc adc watts w/c c characteristic thermal resistance, junction to case maximum lead temperature for soldering purposes: 1/8" from case for 5 seconds symbol rejc tl max 0.7 275 unit c/w c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
bus98 BUS98A electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol win typ max unit off characteristics (1) collector-emitter sustaining voltage (table 1 ) (\c = 200 ma, ib = 0) l = 25 mh bus98 BUS98A collector cutoff current (vcev = rated value, vbe(off) = 1-5 vdc) (vcev = rated value, vbe(off) = 1.5 vdc, tc = 125c) collector cutoff current BUS98A collector-emitter saturation voltage (ic = 20 adc, ib = 4 adc) bus98 (ic = 30 adc, ib = 8 adc) (ic = 20 adc, ib = 4 adc, tc = 100c) (ic = 1 6 adc, ib = 3.2 adc) BUS98A (ic = 24 adc, ib = 5 adc) (ic = 16 adc, ib = 3.2 adc, tc = 100c) base-emitter saturation voltage (ic = 20 adc, ib = 4 adc) bus98 (ic = 20 adc, ib = 4 adc, tc = 100c) (ic = 1 6 adc, ib = 3.2 adc) BUS98A (ic = 16 adc, ib = 3.2 adc, tc = 100c) hfe vce(sat) vbe(sat) 8 __ ? " ? ? 1.5 3.5 2.0 1.5 5.0 2.0 1.6 1.6 1.6 1.6 " vdc vdc dynamic characteristics output capacitance (vcb = 10 vdc, ie = o, ftest = 100 khz) cob ? ? 700 pf switching characteristics restive load (table 1) delay time rise time storage time fall time ib1 = 4.0 a, tp = 30 us, duty cycle < 2%, vbe(off) = 5 v) (for BUS98A- ic = 16 a \b-\ 3 2 a) td tr ts tf _ ? ? ? 0.1 0.4 1.55 0.2 0.2 0.7 2.3 0.4 us inductive load, clamped (table 1) storage time fall time storage time crossover time fall time ic(pk) = 20 a (bus98) lb1=4a vbe(off) -5v, vce(c1) = 250v) !c(pk) = 16a (BUS98A) idi = 6.2. a) (tr* - 95 p^ bus98 BUS98A dc characteristics < cd h? z lu lt o: ^ o o o 3 5 7 10 20 lc, collector current (amps) figure 1. dc current gain e o > er vo o lu _ i o o 0.5 0.3 0.1 i ic = 15al : = 10 a [? tc = 25c ? i 0.1 0.3 0.5 1 234 ib, base current (amps) figure 2. collector saturation region lu e o o 1 0.7 0.3 0.1 3 10 20 1c, collector current (amps) figure 3. collector-emitter saturation voltage 0.3 1 3 1c, collector current (amps) figure 4. base-emitter voltage 10 104 1 103 lu 102 o fe 101 1 100 m-1 \/r vc t ~ -joe 10 /i e = 25 = 150c 0c c^ 25c 1 \ c ever _ - >f-^ ^x* -*i1*^ ^^r / 7" f / / f j ? -?" forward ?=5= ? -~* 1 1 ' 1 1 / f -j 1 / 1 1 1 ?f s ? f 1 1 1 ? j? 1 ? 1 -0.4 -0.2 0 0.2 0.4 vbe, base-emitter voltage (volts) figure 5. collector cutoff region 0.6 10k s 1k 100 10 cib htj=25c l l i l icob: 1 10 100 vr, reverse voltage (volts) figure 6. capacitance 1000
bus98 BUS98A table 1. test conditions for dynamic performance input conditions circuit values test circuits vceo(sus) 20 pw varied to attain 1c = 100 ma lcon = 25mh,vcc = 10v c inf see above for detailed cond c 2 'cx' - vce- ir ? rbsoa and inductive switching ...^ -,ov i v flmje20 ^ _l j_ * adjust vc1 buv20 r* 0.1 uf 50 uf ncqipcn i 1 1 ^ | ^ utolktu ig^ 1 i^ t )x_ . 1 adjust vc2 to obtain desired ib2 rco| = o.osn vdamp = 250v vcc = 20 v nductive test circuit ^v tions ient-; l ' ^x" ? . ?? ? ^^ icpk^ ^^ i"1 r h" f cc output waveforms t-l adjusted to obta n 1^ l lr/nk) x^r tf clamped lcoi (!c(pk)) ix^ ,\, ' vcc l2-j 475 or equivalent resistive switching turn-on time bl adjusted to obtain the forced hp desired turn-off time use inductive switching dr ver as the input to the resistive test circuit. vcc = 250 v pulse width = 10 us resistive test circuit s. ,?. vrc/nt\ 90%vce(pk)/]\90%ic(pk) ? tsv ? 1 90% ib1 \ \. v-x -^ * ^ ? ?-trvfll-yfj ? ? ttj ? -/m^ / ^w/'vcelpk) ^*~^ ?? ^ rv, 1u% ic pk 2% 'c g^? 1 o5 ic \r--ynn < i? a: 1 = _xx lu -x* w o ^.x^ cn ,x^ -a ^x-' cm . <*^ n s* ^ ^^ ^ time figure 7. inductive switching measurements 12345 vbe(off)> base-emitter voltage (volts) figure 8. peak-reverse current
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